s3071, s3072, s3399 and S3883 are si pin photodiodes having a relatively large active area from 1.5 to 5.0 mm yet they offer excellent frequency response from 40 to 300 mhz. these photodiodes are suitable for spatial light transmission and high-speed pulsed ligh t detection. features l active area size s3071: 5.0 mm s3072: 3.0 mm s3399: 3.0 mm S3883: 1.5 mm l cut-off frequency s3071: 40 mhz (v r =24 v) s3072: 45 mhz (v r =24 v) s3399: 100 mhz (v r =10 v) S3883: 300 mhz (v r =20 v) l high reliability: to-5/8 metal package applications l spatial light transmission l high-speed pulsed light detection photodiode si pin photodiode large area, high-speed si pin photodiodes s3071 , s3072 , s3399 , S3883 general ratings / absolute maximum ratings absolute maximum ratings package active area size effective active area reverse voltage v r max. power dissipation p operating temperature topr storage temperature tstg type no. dimensional outline/ window material * 1 (mm) (mm) (mm 2 ) (v) (mw) (c) (c) s3071 ? /k to-8 5.0 19.6 s3072 ? /k 3.0 7.0 50 s3399 ? /k 3.0 7.0 S3883 ? /k to-5 1.5 1.7 30 50 -40 to +100 -55 to +125 electrical and optical characteristics (typ. ta=25 c, unless otherwise noted) photo sensitivity s (a/w) spectral response range peak sensitivity wavelength p short circuit current isc 100 lx dark current i d (na) temp. coefficient of i d t cid cut-off frequency fc r l =50 ? terminal capacitance ct f=1 mhz nep = p type no. (nm) (nm) p 660 nm 780 nm 830 nm (a) typ. max. (times/ c) (mhz) (pf) (w/hz 1/2 ) s3071 17 0.5* 3 10 * 3 40 * 3 18 * 3 2.1 10 -14 * 3 s3072 320 to 1060 920 0.6 0.47 0.54 0.56 6.5 0.3* 3 10 * 3 1.15 45 * 3 7 * 3 1.6 10 -14 * 3 s3399 5.6 0.1* 4 1.0 * 4 100 * 4 20 * 4 9.4 10 -15 * 4 S3883 320 to 1000 840 0.6 0.45 0.58 0.6 1.4 0.05* 2 1.0 * 2 1.12 300 * 2 6 * 2 6.7 10 -15 * 2 *1: window material k: borosilicate glass *2: v r =20 v *3: v r =24 v *4: v r =10 v 1
si pin photodiode s3071, s3072, s3399, S3883 wavelength (nm) photo sensitivity (a/w) 0 200 400 600 0.1 0.2 0.3 0.4 0.5 800 1000 0.6 0.7 (typ. ta=25 ?c) s3399, S3883 s3071, s3072 spectral response photo sensitivity temperature characteristics kpinb0147ea wavelength (nm) temperature coefficient (%/ ? c) -0.5 200 400 600 (typ.) 800 1000 0 +0.5 +1.0 +1.5 s3399, S3883 s3071, s3072 kpinb0148ea reverse voltage (v) dark current 1 pa 0.1 1 10 100 10 pa 100 pa 1 na 10 na (typ. ta=25 ? c) s3071 s3399 S3883 s3072 dark current vs. reverse voltage terminal capacitance vs. reverse voltage kpinb0149ea reverse voltage (v) terminal capacitance 1 pf 0.1 1 10 100 10 pf 100 pf 1 nf (typ. ta=25 ? c, f=1 mhz) s3071 s3072 S3883 s3399 kpinb0150ea 2
si pin photodiode s3071, s3072, s3399, S3883 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?2006 hamamatsu photonics k.k. cat. no. kpin1044e03 aug. 2006 dn kpina0027ec the glass window may extend a maximum of 0.2 mm above the upper surface of the cap. 20 4.2 0.2 2.5 0.45 lead 8.1 0.1 window 5.9 0.1 photosensitive surface 9.1 0.2 5.08 0.25 case 0.4 max. 1.5 max. kpina0024eb 15 5.0 0.2 2.7 0.45 lead 12.35 0.1 13.9 0.2 7.5 0.2 window 10.5 0.1 photosensitive surface case 0.5 max. 1.0 max. index mark 1.4 the glass window may extend a maximum of 0.3 mm above the upper surface of the cap. 20 4.2 0.2 0.45 lead 8.1 0.2 photosensitive surface 9.1 0.2 5.08 0.25 case window 5.9 0.1 2.6 0.4 max. 1.5 max. the glass window may extend a maximum of 0.2 mm above the upper surface of the cap. kpina0026ea 20 4.75 0.2 2.6 0.45 lead 8.2 0.2 photosensitive surface 9.1 0.2 5.08 0.25 case window 3.0 min. 0.4 max 1.5 max. kpina0025eb s3399 S3883 dimensional outline (unit: mm) s3071 s3072
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